| PART |
Description |
Maker |
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| UPD23C16000BLGY-XXX-MJH UPD23C16000BLGY-XXX-MKH UP |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位（字节模式 100万字6位（字模式）
|
NEC, Corp.
NEC Corp.
|
| MR53V3252J-XXTP MR53V3252J MR53V3252J-XXMA |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|
| MR53V8052J-XXMA MR53V8052J-XXRA MR53V8052J-XXTP MR |
524,288-Word x 16-bit or 1,048,576-Word x 8-bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|
| MH2S64CWZTJ-12 MH2S64CZTJ-12 MH2S64CZTJ-15 MH2S64C |
134217728-BIT (2097152-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MR27T12800J-XXXTYE MR27T12800J MR27T12800J-XXXTN M |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM 800万字× 16位或1,600字8位内P2ROM
8M X 16 MASK PROM, 90 ns, PDSO48
|
http://
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
OKI ELECTRIC INDUSTRY CO LTD
|
| M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位（131072字由16位）的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD23C64040JL UPD23C64040JLGX-XXX UPD23C64040JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
